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| 2SB035100ML 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION O 2SB035100ML is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; O O O O O Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; O Chip Size:350m X 350m; Chip Thickness: 15520um Product Name 2SB035100MLJY Chip Topography and Dimensions La: Chip Size: 350m; Lb: Pad Size: 300m; ORDERING SPECIFICATIONS Specification For Au and AlSi wire bonding package O ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@10ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 100 75 750 125 -40~125 Unit V mA mA C C ELECTRICAL CHARACTERISTICS (Tamb=25C) Parameters Reverse Voltage Forward Voltage Symbol VBR VF1 VF2 VF3 Reverse Current IR IR Test Conditions IR=100A IF=0.1mA IF=10mA IF=250mA VR=50V VR=75V Min. 100 -----Max. -0.25 0.45 1 2 5 Unit V V V V A A HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.08.21 Page 1 of 1 |
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